Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

Crystal Research and Technology

Volumn 32, Issue 1, 1997, Pages 111-124

  Lazar, M ^a   Wagner, G ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELASTICITY; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

SHOCKLEY PARTIAL DISLOCATIONS; SPHALERITE TYPE COMPOUND SEMICONDUCTORS;

DISLOCATIONS (CRYSTALS);

EID: 0030644024     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170320111     Document Type: Article

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