Surface-structure-controlled heteroepitaxial growth of 3C-SiC(001)3 × 2 on Si(001): Simulations and experiments

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 10, 1996, Pages 5261-5273

  Kitabatake, Makoto ^a   Greene, Joe E ^b  

^a PANASONIC CORPORATION   (Japan)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Heteroepitaxial growth; MBE; SiC; Simulation; Surface reconstruction

Indexed keywords

ADATOMS; HETEROEPITAXIAL GROWTH; MOLECULAR DYNAMIC SIMULATION; SURFACE RECONSTRUCTION;

CARBON; CARBONIZATION; COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PARAMAGNETIC RESONANCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 0030264199     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5261     Document Type: Article

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