Comprehensive analysis of microtwins in the 3C-SiC films on Si(0 0 1) substrates

Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 40-44

  Zheng, X H ^a   Qu, B ^a   Wang, Y T ^a   Dai, Z Z ^a   Han, J Y ^b   Yang, Hui ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MINERAL RESOURCES   (China)

Author keywords

A1. X ray diffraction; A3. Chemical vapor deposition processes; B1. Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; POINT DEFECTS; SILICON CARBIDE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MICROTWINS;

VAPOR PHASE EPITAXY;

EID: 0035501977     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01542-1     Document Type: Article

References (17)