Ab initio study of misfit dislocations at the SiC/Si(001) interface

Physical Review Letters

Volumn 89, Issue 15, 2002, Pages 156101/1-156101/4

  Cicero, Giancarlo ^a   Pizzagalli, Laurent ^b   Catellani, Alessandra ^c  

^a POLITECNICO DI TORINO   (Italy)

^b LMP CNRS   (France)

^c IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; MOLECULAR DYNAMICS; MULTILAYERS; OPTIMIZATION; SEMICONDUCTING SILICON; SILICON CARBIDE; STOICHIOMETRY; STRAIN; SURFACE STRUCTURE;

AB INITIO MOLECULAR DYNAMICS; INTERFACE STRUCTURE; STRAIN RELEASE;

INTERFACES (MATERIALS);

EID: 0037037996     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.156101     Document Type: Article

References (21)

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