Extreme temperature 6H-SiC JFET integrated circuit technology

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 10, 2009, Pages 2329-2345

  Neudeck, Philip G ^a   Garverick, Steven L ^b   Spry, David J ^a   Chen, Liang Yu ^a   Beheim, Glenn M ^a   Krasowski, Michael J ^a   Mehregany, Mehran ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR ATMOSPHERE; ANALOG AMPLIFIERS; CASE WESTERN RESERVE UNIVERSITY; DIGITAL LOGIC GATES; ELECTRICAL PARAMETER; EXTREME TEMPERATURES; IC CHIPS; IC TECHNOLOGY; INTEGRATED CIRCUIT TECHNOLOGY; JUNCTION FIELD EFFECT TRANSISTORS; NASA GLENN; OPERATIONAL TESTING; OPTICAL MICROGRAPHS; OUTPUT CHARACTERISTICS; SEMICONDUCTOR INTEGRATED CIRCUITS; SILICON ON INSULATOR; TECHNOLOGY MATURATION; WAVE FORMS;

AIRCRAFT; AIRCRAFT ENGINES; CHIP SCALE PACKAGES; DIFFERENTIAL AMPLIFIERS; FIELD EFFECT TRANSISTORS; LOGIC GATES; NASA; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; TECHNOLOGY;

INTEGRATED CIRCUITS;

EID: 70350029302     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925188     Document Type: Article

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