Numerical simulation of implanted top-gate 6H-SiC JFET characteristics

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 415-418

  Lades, M ^a   Berz, D ^a   Schmid, U ^b   Sheppard, S T ^b   Kaminski, N ^b   Wondrak, W ^b   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

High temperature; JFET; Reverse modeling; SiC; Simulation

Indexed keywords

JUNCTION FIELD-EFFECT TRANSISTORS (JFET);

COMPUTER SIMULATION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 0003543717     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00545-5     Document Type: Article

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