Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 652-655

  Ohshima, Takeshi ^a   Uedono, Akira ^b   Abe, Hiroshi ^a   Chen, Z Q ^b   Itoh, Hisayoshi ^a   Yoshikawa, Masahito ^a   Abe, Koji ^c   Eryu, Osamu ^c   Nakashima, Kenshiro ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Co implantation; Positron annihilation; Silicon carbide; Vacancy type defects

Indexed keywords

ALUMINUM; ANNEALING; CARBON; CRYSTAL DEFECTS; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY;

VACANCY-TYPE DEFECTS;

SILICON CARBIDE;

EID: 0035670382     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00780-3     Document Type: Article

References (12)