Characterization of 4H-SiC JFETS for use in analog amplifiers capable of 723 K operation

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 105-110

  Casady, J B ^a   Sheridan, D C ^a   Dillard, W C ^a   Johnson, R W ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); COMPOSITION EFFECTS; HIGH TEMPERATURE OPERATIONS; OXIDES; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SILICON CARBIDE; TRANSCONDUCTANCE;

ANALOG AMPLIFIERS; PASSIVATION LAYERS; PASSIVATION OXIDES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030404025     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-105     Document Type: Conference Paper

References (15)