6H-SiC transistor integrated circuits demonstrating prolonged operation at 500 °C

International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008

Volumn , Issue , 2008, Pages 95-102

  Neudeck, Philip G ^a   Spry, David J ^a   Chen, Liang Yu ^a   Chang, Carl W ^a   Beheim, Glenn M ^a   Okojie, Robert S ^a   Evans, Laura J ^a   Meredith, Roger ^a   Ferrier, Terry ^a   Krasowski, Michael J ^a   Prokop, Norman F ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Integrated Circuit; JFET; SiC

Indexed keywords

ELECTRICAL CHARACTERIZATION; ELECTRICAL PARAMETER; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); POWER SUPPLY VOLTAGE; SEMICONDUCTOR INTEGRATED CIRCUITS; SIC; SILICON ON INSULATOR; TECHNOLOGY INSERTION;

AIRCRAFT ENGINES; ELECTRIC POWER SYSTEMS; FIELD EFFECT TRANSISTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NASA; SILICON CARBIDE; TRANSISTORS;

INTEGRATED CIRCUITS;

EID: 79959286771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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