Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1946-1953

  Lee, Jeong Youb ^a   Singh, Shakti ^b   Cooper, James A ^b  

^a APPLIED MATERIALS INC   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

High temperature ICs; SiC ICs; Silicon carbide; Smart power; Transistor transistor logic (TTL)

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; MISSILE LAUNCHING SYSTEMS; NETWORKS (CIRCUITS); NONMETALS; SILICON; SILICON CARBIDE; TECHNOLOGY; TRANSISTORS;

BASE-EMITTER VOLTAGE; FAN-OUT; HIGH-TEMPERATURE ICS; INTEGRATED CIRCUIT TECHNOLOGY; NOISE MARGIN; POWER SUPPLIES; SIC ICS; SILICON CARBIDE DEVICES; SMART POWER; TRANSISTOR-TRANSISTOR LOGIC; TRANSISTOR-TRANSISTOR LOGIC (TTL);

MONOLITHIC INTEGRATED CIRCUITS;

EID: 49249102200     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926681     Document Type: Article

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