High temperature performance of implanted-gate n-channel JFETs in 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1077-1080

  Sheppard, S T ^a   Lauer, V ^a   Wondrak, W ^a   Niemann, E ^a  

^a DAIMLER AG   (Germany)

Author keywords

High Temperature; Ion Implantation; Junction Field Effect Transistor; Monolithic

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; TRANSCONDUCTANCE;

DRAIN SATURATION CURRENT; ELECTRON MOBILITY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 11644305367     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1077     Document Type: Article

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