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Volumn 622, Issue , 2000, Pages

Silicon carbide die attach scheme for 500°c operation

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; THICK FILMS;

EID: 0034428510     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-622-t8.10.1     Document Type: Conference Paper
Times cited : (32)

References (6)
  • 2
    • 0003684350 scopus 로고    scopus 로고
    • 600 °C logic gates using silicon carbide JFET's
    • March 20-23, Anaheim, CA. An earlier review article: Robert F. Davis, Galina Kelner, Michael Shur, John W. Palmour, and John A. Edmond, Thin film deposition and microelectronic and optoelectronic device fabrication and characyterization in monocrystalline alpha and beta silicon carbide, Special Issue on Large Bandgap Electronic Materials and Components, Proceedings of the IEEE, Vol.79, 5, 1991
    • (2000) 2000 Government Microcircuit Applications Conference
    • Neudeck, P.G.1    Beheim, G.M.2    Salupo, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.