Long-term characterization of 6H-SiC transistor integrated circuit technology operating at 500°C

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 209-214

  Neudeck, Philip G ^a   Spry, David J ^a   Chen, Liang Yu ^a   Chang, Carl W ^a   Beheim, Glenn M ^a   Okojie, Robert S ^a   Evans, Laura J ^a   Meredith, Roger D ^a   Ferrier, Terry L ^a   Krasowski, Michael J ^a   Prokop, Norman F ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIRCRAFT ENGINES; ELECTRIC FIELD EFFECTS; INTEGRATED CIRCUITS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NASA; TIMING CIRCUITS; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

AIR ATMOSPHERE; ELECTRICAL PARAMETER; HIGH TEMPERATURE; INTEGRATED CIRCUIT TECHNOLOGY; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); SEMICONDUCTOR INTEGRATED CIRCUITS; SIC TRANSISTORS;

SILICON CARBIDE;

EID: 55849134765     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d11-02     Document Type: Conference Paper

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