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Volumn 76, Issue 14, 2000, Pages 1896-1898

Low-dose nitrogen implants in 6H-silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000551305     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126204     Document Type: Article
Times cited : (14)

References (14)
  • 8
    • 85037493558 scopus 로고    scopus 로고
    • note
    • Implants were performed by Leonard Kroko Inc., Tustin, CA and by Implant Sciences, Inc., Wakefield, MA.
  • 10
    • 85037521453 scopus 로고    scopus 로고
    • note
    • The implant simulation code was provided by Implant Sciences. Inc., Wakefield, MA.
  • 13
    • 0009359591 scopus 로고    scopus 로고
    • Proceedings of the 1995 Silicon Carbide and Related Materials Conference, Kyoto, Japan, IOP Publishing, Bristol, UK, Chap. 3
    • M. V. Rao, J. Gardner, O. W. Holland, G. Kelner, M. Ghezzo, D. S. Simons, and P. H. Chi, Proceedings of the 1995 Silicon Carbide and Related Materials Conference, Kyoto, Japan, Inst. Phys. Conf. Ser. (IOP Publishing, Bristol, UK, 1996), Vol. 142, Chap. 3, p. 521.
    • (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 521
    • Rao, M.V.1    Gardner, J.2    Holland, O.W.3    Kelner, G.4    Ghezzo, M.5    Simons, D.S.6    Chi, P.H.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.