Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7687-7689

  Scozzie, C J ^a   McLean, F B ^a   McGarrity, J M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344979636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365349     Document Type: Article

References (12)

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