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Volumn 91, Issue 7, 2002, Pages 4136-4142
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Difference of secondary defect formation by high energy B + and Al + implantation into 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECT SIZE;
HIGH ENERGY;
IMPLANTED IONS;
IMPLANTED LAYERS;
INTERSTITIALS;
ION SPECIES;
SECONDARY DEFECT;
SELF-DIFFUSION;
VOLUME CONCENTRATION;
ACTIVATION ENERGY;
AGGLOMERATION;
ALUMINUM;
DEFECTS;
HIGH ENERGY PHYSICS;
IONS;
SILICON CARBIDE;
TRANSMISSION ELECTRON MICROSCOPY;
DEFECT DENSITY;
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EID: 0036536037
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1457540 Document Type: Article |
Times cited : (33)
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References (21)
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