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Volumn 91, Issue 7, 2002, Pages 4136-4142

Difference of secondary defect formation by high energy B + and Al + implantation into 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SIZE; HIGH ENERGY; IMPLANTED IONS; IMPLANTED LAYERS; INTERSTITIALS; ION SPECIES; SECONDARY DEFECT; SELF-DIFFUSION; VOLUME CONCENTRATION;

EID: 0036536037     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1457540     Document Type: Article
Times cited : (33)

References (21)
  • 15
    • 1642395023 scopus 로고
    • apl APPLAB 0003-6951
    • S. T. Dunham, Appl. Phys. Lett. 63, 464 (1993). apl APPLAB 0003-6951
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 464
    • Dunham, S.T.1
  • 16
  • 19
  • 20
    • 84861450555 scopus 로고    scopus 로고
    • In Ref. 19, 15
    • In Ref. 19, p. 15.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.