Stable electrical operation of 6H-SiC JFETs and ICs for thousands of hours at 500 °C

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 456-459

  Neudeck, Philip G ^a   Spry, David J ^a   Chen, Liang Yu ^a   Beheim, Glenn M ^a   Okojie, Robert S ^a   Chang, Carl W ^b   Meredith, Roger D ^a   Ferrier, Terry L ^a   Evans, Laura J ^a   Krasowski, Michael J ^a   Prokop, Norman F ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

^b ASRC Aerospace Corp   (United States)

Author keywords

High temperature techniques; Integrated circuit (IC) reliability; JFET ICs; Junction field effect transistors (JFETs); Silicon compounds

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; INTEGRATED CIRCUITS; OHMIC CONTACTS; SILICON COMPOUNDS; TRANSISTORS;

DIELECTRIC PASSIVATION; SMALL-SCALE INTEGRATED CIRCUITS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 43549101592     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919787     Document Type: Article

References (13)

1. P. G. Neudeck, R. S. Okojie, and L.-Y. Chen, "High-temperature electronics - A role for wide bandgap semiconductors," Proc. IEEE vol. 90, no. 6, pp. 1065-1076, Jun. 2002.
2. R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, "Thin film deposition nnd microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide," Proc. IEEE, vol. 79, no. 5, pp. 677-701, May 1991.
3. K. Dohnke, R. Rupp, D. Peters, J. Volkl, and D. Stephani, "6H-SiC field effect transistor for high temperature applications," in Inst. Phys. Conf. Series, no. 137, Silicon Carbide Related Mater., 1994, pp. 625-627.
4. P. G. Neudeck, J. B. Petit, and C. S. Salupo, "Silicon carbide buried-gate junction field effect transistors for high-temperature power electronic applications," in Proc. 2nd Int. High Temperature Electron. Conf., Charlotte, NC, Jun. 1994, pp. X-23-X-28.
5. P. G. Neudeck, G. M. Beheim, and C. S. Salupo, "600 °C logic gates using silicon carbide JFETs," in Proc. Government Microcircuit Appl. Conf., Anahiem, CA, Mar. 2000, pp. 421-424.
6. A. M. Dabiran, A. Osinsky. P. P. Chow. R. C. Fitch. J. K. Gillespie. N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, J. R. LaRoche, F. Ren, and S. J. Pearton, "GaN-based devices for very high temperature applications," Proc. IMPS Int. High Temperature Electron. Conf., Santa Fe, NM, May 2006, pp. 329-333.
7. D. Spry, P. Neudeck, R. Okojie, L.-Y. Chen, G. Beheim, R. Meredith, W. Mueller, and T. Ferrier, "Electrical operation of 6H-SiC MESFET at 500 "C for 500 hours in air imbient," in Proc. IMAPS Int. High Temperature Electron. Conf., Santa Fe, NM, 2004, pp. WA1-1-WA1-7.
8. L. Y. Chen, D. J. Spry, and P. G. Neudeck, "Demonstration of 500 °C AC amplifier based on SiC MESFET and ceramic packaging," in Proc. IMAPS Int. High Temperature Electron. Conf., Santa Fe, NM, May 2006, pp. 240-246.
9. P. G. Neudeck, D. J. Spry, L.-Y. Chen, R. S. Okojie, G. M. Beheim, R. Meredith, and T. Ferrier, "SiC field effect transistor technology demonstrating prolonged stable operation at 500 "C," in Materials Science Forum, vol. 556-557, N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, and A. Horsfall, Eds. Zurich, Switzerland: Trans Tech Publications, 2007, pp. 831-834.
10. Cree, Inc. [Online]. Available: http://www.cree.com
11. D. J. Spry, P. G. Neudeck, L.-Y. Chen, G. M. Beheim, R. S. Okojie, C. W. Chang, R. D. Meredith, T. L. Ferrier, and L. J. Evans, "Fabrication and testing of 6H-SiC JFETs for prolonged 500 "C operation in air ambient," Materials Science Forum, Silicon Carbide and Related Materials 2007, T. Kimoto, Ed. Zurich, Switzerland: Trans Tech Publications, 2008.
12. 2/Pt ohmic contacts on SiC after 1000 h at 600 °C," J. Appl. Phys., vol. 91, no. 10, pp. 6553-6559, 2002.
13. P. G. Neudeck, D. J. Spry, L. Y. Chen, G. M. Beheim, R. S. Okojie, C. W. Chang, R. D. Meredith, T. L. Ferrier, and L. J. Evans, IEEE Trans. Electron Devices, 2008. submitted for publication.