Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Opto-Electronics Review

Volumn 17, Issue 3, 2009, Pages 217-224

  Piskorski, L ^a   Wasiak, M ^a   Sarzala R P ^a   Nakwaski, W ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

1.3 m VCSELs; Optical fibre communication; QD VCSELs; VCSEL structure optimisation

Indexed keywords

CONTINUOUS WAVE LASERS; EXCITED STATES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; NANOCRYSTALS; OPTICAL COMMUNICATION; OPTICAL FIBER COMMUNICATION; OPTICAL FIBERS; QUANTUM DOT LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; STRUCTURAL OPTIMIZATION;

ELECTRICAL CONDUCTIVITY; FREE CARRIER ABSORPTION; OPTICAL CAVITIES; OPTICAL WAVEGUIDING; SELF-CONSISTENT SIMULATIONS; STRUCTURE OPTIMISATION; UNIFORM CURRENTS; VERTICAL CAVITY SURFACE EMITTING;

SURFACE EMITTING LASERS;

EID: 70349619628     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-008-0067-3     Document Type: Article

References (41)

1. K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips, "Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers", Electron. Lett.32, 1374-1375 (1996).
2. D.L. Huffaker, O. Baklenov, L.A. Graham, B.G. Streetman, and D.G. Deppe, "Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture", Appl. Phys. Lett.70, 2356-2358 (1997).
3. X. Huang, A. Stintz, C.P. Hains, G.T. Liu, J. Cheng, and K.J. Malloy, "Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser", IEEE Photonic. Tech. L.12, 227-229 (2000).
4. D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, and D.G. Deppe, "1.3-μm room-temperature GaAs-based quantum-dot laser", Appl. Phys. Lett.73, 2564-2566 (1998).
5. Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop'ev, A.R. Kovsh, N. A. Maleev, M.V. Maximov, V.M. Ustinov, B.V. Volovik, E.A. Zhukov, Z.I. Alferov, N.N. Ledentsov, and D. Bimberg, "1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition", Electron. Lett.35, 898-900 (1999).
6. N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Z.I. Alferov, and J.A. Lott, "Quantum-dot heterostructure lasers", IEEE J. Sel. Top. Quant.6, 439-451 (2000).
7. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Z.I. Alferov, and D. Bimberg, "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm", Electron. Lett.36, 1384-1385 (2000).
8. V.M. Ustinov, A.E. Zhukov, N.A. Maleev, A.R. Kovsh, S.S. Mikhrin, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Z.I. Alferov, J.A. Lott, and D. Bimberg, "1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy", J. Cryst. Growth227/228, 1155-1161 (2001).
9. H.C. Yu, J.S. Wang, Y.K. Su, S.J. Chang, F.I. Lai, Y.H. Chang, H.C. Kuo, C.P. Sung, H.P.D. Yang, K.F. Lin, J.M. Wang, J.Y. Chi, R.S. Hsiao, and S. Mikhrin, "1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE", IEEE Photonic. Tech. L.18, 418-420 (2006).
10. Y.H. Chang, P.C. Peng, W.K. Tsai, G. Lin, F. Lai, R.S. Hsiao, H.P. Yang, H.C. Yu, K. F. Lin, J.Y. Chi, S.C. Wang, and H.C. Kuo, "Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB", IEEE Photonic. Tech. L.18,847-849 (2006).
11. M. Grundmann, "The present status of quantum dot lasers", PhysicaE5, 167-184 (1999).
12. R.P. Sarzała, "Modelling of the threshold operation of 1.3-μm GaAs-based oxide-confined (InGa)As/GaAs quantum-dot vertical-cavity surface-emitting lasers", IEEE J. Quantum Elect.40, 629-639 (2004).
13. G.T. Liu, A. Stintz, H. Li, K.J. Malloy, and L.F. Lester, "Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well", Electron. Lett.35, 1163-1165 (1999).
14. H. Wenzel and H.J. Wünsche, "The effective frequency method in the analysis of vertical-cavity surface-emitting lasers", IEEE J. Quantum Elect.33, 1156-1162 (1997).
15. R.P. Sarzała and W. Nakwaski, "Optimisation of the 1.3-μm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for their low-threshold room-temperature operation (invited paper)", J. Phys.: Condens. Mat.16, S3121-S3140 (2004).
16. A. Tomczyk, R.P. Sarzała, T. Czyszanowski, M. Wasiak and W. Nakwaski, "Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers", Opto-Electron. Rev.11, 65-75 (2003).
17. R.P. Sarzała, M. Wasiak, T. Czyszanowski, M. Bugajski, and W. Nakwaski, "Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers", Opt. Quant. Electron.35, 675-692 (2003).
18. C. Kopf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr, "Reexamination of electron mobility dependence on dopants in GaAs", Proc. 27th European Solid-State Device Research Conf., Stuttgart, 304-307 (1997).
19. N. Chand, T. Henderson, J. Klem, W.T. Masselink, R. Fischer, Y.C. Chang, and H. Morko, "Comprehensive analysis of Si-doped AlxGa1-xAs (x = 0 to 1): Theory and experiments", Phys. Rev.B30, 4481-4492 (1984).
20. W. Nakwaski, "Hole mobility in carbon-doped GaAs and (AlGa)As", Phys. Status Solidi (a) 132, K47-K49 (1992).
21. W. Nakwaski and M. Osiński, "Thermal analysis of GaAs/AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors", IEEE J. Quantum Elect.29, 1981-1995 (1993).
22. T. Ishikawa, J. Saito, S. Sasa, and S. Hiyamizu, "Electrical properties of Si-Doped AlxGa1-xAs layers grown by MBE", Jpn. J. Appl. Phys. 221, L675-L676 (1982).
23. R. Heilman and G. Oelgart, "Ionization energy of the carbon acceptor in AlxGa1-xAs", Semicond. Sci. Technol.5, 1040-1045 (1990).
24. K. Masu, M. Konagai, and K. Takahashi, "Acceptor energy level for Zn in Ga1-xAlxAs", J. Appl. Phys.51, 1060-1064 (1980).
25. M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters, World Scientific, Singapore/New Jersey, 1996.
26. T. Som, P. Ayyub, D. Kabiraj, N. Kulkarni, V.N. Kulkarni, and D.K. Avasthi, "Formation of Au0.6Ge0.4 alloy induced by Au-ion irradiation of Au/Ge bilayer", J. Appl. Phys.93, 903-906 (2003).
27. D.R. Lide, CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, 2005.
28. E. Goldratt, "Experimental test of the Wiedmann-Franz law for indium", J. Phys. F: Met. Phys.10, L95-L99 (1980).
29. S. Ghosh, P. Bhattacharya, E. Stoner, J. Singh, H. Jiang, S. Nuttinck, and J. Laskar, "Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots", Appl. Phys. Lett.79, 722-724 (2001).
30. C. Walther, J. Bollmann, H. Kissel, H. Kirmse, W. Neumann, and W.T. Masselink, "Characterization of electron trap states due to InAs quantum dots in GaAs", Appl. Phys. Lett.76, 2916-2918 (2000).
31. J. Bloch, J. Shah, L.N. Pfeiffer, K.W. West, and S.N.G. Chu, "Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm", Appl. Phys. Lett.77, 2545-2547 (2000).
32. G. Sun, R.A. Soref, and J.B. Khurgin, "Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap", Appl. Phys. Lett.84, 3861-3863 (2004).
33. A. Fiore, M. Rossetti, B. Alloing, C. Paranthoen, J.X. Chen, L. Geelhaar, and H. Riechert, "Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots", Phys. Rev.B70, 205311 (2004).
34. S. Adachi, "GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications", J. Appl. Phys.58, R1-R29 (1985).
35. A. Amith, I. Kudman, and E.F. Steigmeier, "Electron and phonon scattering in GaAs at high temperatures", Phys. Rev.138, A1270-A1276 (1965).
36. M. LeDu, D. Massoubre, J.C. Harmand, and J.L. Oudar, "Thermal conductance of laterally-wetoxidised GaAs/AlxOy bragg reflectors", Electron. Lett.42, 1060-1061 (2006).
37. S. Gehrsitz, F.K. Reinhart, C. Gourgon, N. Herres, A. Vonlanthen, and H. Sigg, "The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling", J. Appl. Phys.87, 7825-7837 (2000).
38. T. Kitatani and M. Kondow, "Characterization of the refractive index of lateral-oxidation-formed AlxOy by spectroscopic ellipsometry", Jpn. J. Appl. Phys. 141, 2954-2957 (2002).
39. C.H. Henry, R.A. Logan, F.R. Merrit, and J.P. Luongo, "The effect of intervalence band absorption on the thermal behaviour of InGaAsP lasers", IEEE J. Quantum Elect.19, 947-952 (1983).
40. P. Enders, J. Piprek, and M. Woerner, "Intervalence band absorption in the AIGaAs mirror layers of long-wavelength vertical cavity lasers", CLEO'97 11, 234-235 (1997).
41. D.I. Babić, J. Piprek, K. Streubel, R.P. Mirin, N.M. Margalit, D.E. Mars, J.E. Bowers, and E.L. Hu, "Design and analysis of double-fused 1.55-μm vertical-cavity lasers", IEEE J. Quantum Elect.33, 1369-1383 (1997).