Optimization of 1.3 μm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Sarzałe, Robert P ^a   Nakwaski, Włodzimierz ^a,b  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BAND STRUCTURE; COMPUTER SIMULATION; CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; MIRRORS; OPTICAL FIBERS; OPTIMIZATION; PRODUCT DESIGN; RADIATION; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC PROPERTIES;

BRAGG REFLECTORS (BR); CONTINUOUS-WAVES (CW); OPTICAL TRANSMITTERS; VERTICAL-CAVITY SURFACE-EMITING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 4043122442     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/009     Document Type: Article

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