1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

IEEE Photonics Technology Letters

Volumn 18, Issue 2, 2006, Pages 418-420

  Mikhrin, S ^e   Chang, Y H ^c   Kuo, H C ^c   Lin, K F ^b   Wang, J M ^b   Chi, J Y ^b   Hsiao, R S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^e NL Nanosemiconductor GmbH   (Germany)

Author keywords

Fully doped distributed Bragg reflector (DBR); InAs quantum dot (QD); molecular beam epitaxy (MBE); vertical cavity surface emitting laser (VCSEL)

Indexed keywords

EID: 85008031227     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2005.863166     Document Type: Article

References (7)

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