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Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3861-3863

Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap

(3) Sun, Gregory a Soref, Richard A b Khurgin, Jacob B c

a UNIVERSITY OF MASSACHUSETTS BOSTON (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c Whiting School of Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM DOT LASERS; TEMPERATURE DEPENDENCE; THRESHOLD CURRENTS;

COMPOSITION; ELECTRIC CURRENTS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES;

SEMICONDUCTOR LASERS;

EID: 2942552830 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1751606 Document Type: Article

Times cited : (7)

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