Modeling of the threshold operation of 1.3-μm GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics

Volumn 40, Issue 6, 2004, Pages 629-634

  Sarzala, Robert P ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Optical fiber communication; Quantum dots; Semiconductor device modeling; Semiconductor lasers; Simulation

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; GAIN MEASUREMENT; OPTIMIZATION; QUANTUM EFFICIENCY; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE;

AUGER RECOMBINATION; QUANTUM DOT VERTICAL CAVITY SURFACE EMITTING LASERS; THRESHOLD CURRENT DENSITY; THRESHOLD OPERATION;

SEMICONDUCTOR LASERS;

EID: 3042646345     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.828228     Document Type: Article

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