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Volumn 93, Issue 2, 2003, Pages 903-906

Formation of Au0.6Ge0.4 alloy induced by Au-ion irradiation of Au/Ge bilayer

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION BOMBARDMENT; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0037439531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530356     Document Type: Article
Times cited : (32)

References (19)
  • 1
    • 0003926828 scopus 로고
    • Academic, New York
    • S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983); Metallization: Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, Boston, 1993).
    • (1983) Silicides for VLSI Applications
    • Murarka, S.P.1
  • 2
    • 0003634478 scopus 로고
    • Butterworth-Heinemann, Boston
    • S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983); Metallization: Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, Boston, 1993).
    • (1993) Metallization: Theory and Practice for VLSI and ULSI


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.