Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers

Optical and Quantum Electronics

Volumn 35, Issue 7, 2003, Pages 675-692

  Sarzala, R P ^a   Wasiak, M ^a   Czyszanowski, T ^a   Bugajski, M ^b   Nakwaski, W ^a,c  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

1.3 m fibre communication; 1.3 m in plane lasers; Quantum dot lasers; Threshold laser simulation

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; THERMODYNAMIC PROPERTIES;

ARSENIDE-BASED DIODE LASER; OPTICAL-ELECTRICAL-THERMAL-GAIN MODEL; QUANTUM DOT LASER; ROOM-TEMPERATURE THRESHOLD OPERATION;

SEMICONDUCTOR LASERS;

EID: 0038129564     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023977203373     Document Type: Article

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