메뉴 건너뛰기




Volumn 11, Issue 1, 2003, Pages 65-75

Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers

Author keywords

Edge emitting diode lasers; Modelling of a diode laser operation; Nitride diode lasers

Indexed keywords

COMPUTER SIMULATION; CONTINUOUS WAVE LASERS; ELECTROOPTICAL DEVICES; LIGHT EMISSION; MATHEMATICAL MODELS; OPTIMIZATION; THERMAL EFFECTS;

EID: 0347596381     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (21)

References (28)
  • 1
    • 0004019091 scopus 로고
    • North-Holland Science Publishers B.V. & Polish Scientific Publishers - PWN, Amsterdam/ /Warsaw
    • B. Mroziewicz, M. Bugajski, and W. Nakwaski, Physics of Semiconductor Lasers, North-Holland Science Publishers B.V. & Polish Scientific Publishers - PWN, Amsterdam/ /Warsaw 1991.
    • (1991) Physics of Semiconductor Lasers
    • Mroziewicz, B.1    Bugajski, M.2    Nakwaski, W.3
  • 3
    • 0346581296 scopus 로고    scopus 로고
    • Simulation of optical phenomena in vertical-cavity surface-emitting lasers, I. Fundamental principles, II. Models
    • W. Nakwaski, "Simulation of optical phenomena in vertical-cavity surface-emitting lasers, I. Fundamental principles, II. Models", Opto-Electron. Rev. 8, 11 and 19 (2000).
    • (2000) Opto-Electron. Rev. , vol.8 , pp. 11
    • Nakwaski, W.1
  • 4
    • 4043167872 scopus 로고    scopus 로고
    • Three-dimensional simulation of vertical-cavity surface-emitting semiconductor lasers
    • Chapter 5, edited by H. Li and K. Iga, Springer Verlag, Berlin
    • M. Osiński and W. Nakwaski, "Three-dimensional simulation of vertical-cavity surface-emitting semiconductor lasers", Chapter 5 in Vertical-Cavity Surface-Emitting Laser Devices, pp. 135-192, edited by H. Li and K. Iga, Springer Verlag, Berlin 2003.
    • (2003) Vertical-cavity Surface-emitting Laser Devices , pp. 135-192
    • Osiński, M.1    Nakwaski, W.2
  • 5
    • 0035397695 scopus 로고    scopus 로고
    • Comprehensive modelling of vertical-cavity laser-diodes by the method of lines
    • O. Conradi, S. Helfert, and R. Pregla, "Comprehensive modelling of vertical-cavity laser-diodes by the method of lines", IEEE J. Quantum Electron. 37, 928 (2001).
    • (2001) IEEE J. Quantum Electron. , vol.37 , pp. 928
    • Conradi, O.1    Helfert, S.2    Pregla, R.3
  • 7
    • 0032166176 scopus 로고    scopus 로고
    • Efficient analysis of periodic structures
    • S.F. Helfert and R. Pregla, "Efficient analysis of periodic structures", J. Lightwave Technol. 16, 1694 (1998).
    • (1998) J. Lightwave Technol. , vol.16 , pp. 1694
    • Helfert, S.F.1    Pregla, R.2
  • 10
    • 0042430793 scopus 로고    scopus 로고
    • Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers
    • P. Maćkowiak and W. Nakwaski, "Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers", J. Phys. D: Appl. Phys. 33, 642 (2000).
    • (2000) J. Phys. D: Appl. Phys. , vol.33 , pp. 642
    • Maćkowiak, P.1    Nakwaski, W.2
  • 12
    • 84876631931 scopus 로고    scopus 로고
    • H.M. Chung, Y.C. Pau, W.C. Chung, N C. Chen, C.C. Tsai, C.I. Chiang, C.H. Liu, W. Chang, M.C. Lee, W.H. Chen, and W.K. Chen, "Long-term photocapacitance decay behaviour in undoped GaN", Proc. Intern. Workshop on Nitride Semiconductors, Nagoya (Japan) 24-27 Sept. 2000, IPAP Conf. Series 1 463 (2000).
    • (2000) IPAP Conf. Series , vol.1 , pp. 463
  • 13
    • 0347211491 scopus 로고    scopus 로고
    • Improved electrical property of InGaN/GaN light-emitting diodes by using a Mg-doped AlGaN/GaN superlattices
    • J.K. Shen, G.C. Chi, and M.J. Jou, "Improved electrical property of InGaN/GaN light-emitting diodes by using a Mg-doped AlGaN/GaN superlattices", ibid, 1 856 (2000).
    • (2000) IPAP Conf. Series , vol.1 , pp. 856
    • Shen, J.K.1    Chi, G.C.2    Jou, M.J.3
  • 14
    • 84876610181 scopus 로고    scopus 로고
    • http://home.san.rr.com/nessengr/techdata/metakesist.html
    • http://www.webelements.com/webelements/elements/ /text/Cu/phys.html http://home.san.rr.com/nessengr/techdata/metakesist.html
  • 16
    • 0035423505 scopus 로고    scopus 로고
    • Electrical characterisation and metallurgical analysis of Pd-containing multilayer contacts on GaN
    • E.F. Chor, D. Zhang, H. Gong, G.L. Chen, and T.Y.F. Liew, "Electrical characterisation and metallurgical analysis of Pd-containing multilayer contacts on GaN", J. Appl. Phys. 90, 1242 (2001).
    • (2001) J. Appl. Phys. , vol.90 , pp. 1242
    • Chor, E.F.1    Zhang, D.2    Gong, H.3    Chen, G.L.4    Liew, T.Y.F.5
  • 18
    • 0000327786 scopus 로고    scopus 로고
    • The rate of radiative recombination in nitride semiconductors and alloys
    • A. Dmitriev and A. Oruzheinikov, "The rate of radiative recombination in nitride semiconductors and alloys", J. Appl. Phys. 86, 3241 (1999).
    • (1999) J. Appl. Phys. , vol.86 , pp. 3241
    • Dmitriev, A.1    Oruzheinikov, A.2
  • 19
    • 21544461610 scopus 로고
    • Large band-gap SiC, III-V nitrides, and II-VI ZnSe-based semiconductor device technologies
    • H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, "Large band-gap SiC, III-V nitrides, and II-VI ZnSe-based semiconductor device technologies", J. Appl. Phys. 76, 1363 (1994).
    • (1994) J. Appl. Phys. , vol.76 , pp. 1363
    • Morkoç, H.1    Strite, S.2    Gao, G.B.3    Lin, M.E.4    Sverdlov, B.5    Burns, M.6
  • 21
    • 0000630140 scopus 로고
    • Thermal conductivity of binary, ternary, and quaternary III-V compounds
    • W. Nakwaski, "Thermal conductivity of binary, ternary, and quaternary III-V compounds", J. Appl. Phys. 64, 159 (1988).
    • (1988) J. Appl. Phys. , vol.64 , pp. 159
    • Nakwaski, W.1
  • 23
    • 0031269465 scopus 로고    scopus 로고
    • Line shape function for semiconductor laser modelling
    • P.O. Eliseev, "Line shape function for semiconductor laser modelling", Electron. Lett. 33, 2046 (1997).
    • (1997) Electron. Lett. , vol.33 , pp. 2046
    • Eliseev, P.O.1
  • 25
    • 84876619388 scopus 로고    scopus 로고
    • Free carrier screening of quantum-confined Stark effect affecting on luminescence energy shift and carrier lifetime in InGaN quantum wells
    • Nagoya, Japan, 24-27 Sept.
    • T. Kuroda and A. Tackeuchi, "Free carrier screening of quantum-confined Stark effect affecting on luminescence energy shift and carrier lifetime in InGaN quantum wells", Proc. Intern. Workshop on Nitride Semiconductors, Nagoya, Japan, 24-27 Sept. 2000, IPAP Conf. Series 1 516 (2000).
    • (2000) Proc. Intern. Workshop on Nitride Semiconductors
    • Kuroda, T.1    Tackeuchi, A.2
  • 26
    • 84876628641 scopus 로고    scopus 로고
    • T. Kuroda and A. Tackeuchi, "Free carrier screening of quantum-confined Stark effect affecting on luminescence energy shift and carrier lifetime in InGaN quantum wells", Proc. Intern. Workshop on Nitride Semiconductors, Nagoya, Japan, 24-27 Sept. 2000, IPAP Conf. Series 1 516 (2000).
    • (2000) IPAP Conf. Series , vol.1 , pp. 516


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.