Reexamination of electron mobility dependence on dopants in GaAs

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 304-307

  Kopf Ch ^a   Kaiblinger Grujin, G ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DOPING (ADDITIVES); GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

ANALYTICAL EXPRESSIONS; ATOMIC NUMBERS; DOPANT SPECIES; IMPURITY IONS; MOBILITY VALUE; MONTE CARLO CALCULATION; SCATTERING RATES; THOMAS-FERMI;

ELECTRON MOBILITY;

EID: 84907556003     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194426     Document Type: Conference Paper

References (10)

1. G. Masetti, M. Severi, and S. Solmi. Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus-and Boron-Doped Silicon. IEEE Trans. Electron Devices, ED-30(7):764-769, 1983.
2. D. Lancefield, A.R. Adams, and M.A. Fisher. Reassessment of Ionized Impurity Scattering and Compensation in GaAs and InP Including Correlation Scattering. J. Appl. Phys., 62(6):2342-2359, 1987.
3. D.A. Anderson, N. Apsley, P. Davies, and P.L. Giles. Compensation in Heavily Doped n-Type InP and GaAs. J. Appl. Phys., 58(8):3059-3067, 1985.
4. L.H. Thomas. The Calculation of Atomic Fields. Proc. Camb. Philos. Soc, 23:542-548, 1927.
5. E. Fermi. Un metodo statistico per la determinazione di alcune priorieta dell'atome. Rend. Accad. Naz. Lincei, 6:602-607, 1927.
6. D.M. Szmyd, P. Porro, A. Majerfeld, and S. Lagomarsino. Heavily Doped GaAs:Se. I. Photoluminescence Determination of the Electron Effective Mass. J. Appl. Phys., 68(5):2367-2375, 1990.
7. M. Landolt and J. Börnstein. Numerical Data and Functional Relationships in Science and Techology, volume 22/A of New Series, Group III. Springer, Berlin, 1987.
8. J.R. Lowney and H.S. Bennett. Majority and Minority Electron and Hole Mobilities in Heavily Doped GaAs. J. Appl. Phys., 69(10):7102-7110, 1991.
9. Ch. Köpf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr. Influence of Dopant Species on Electron Mobility in InP. In Proc. 1997 Int. Conf. on Indium Phosphide and Related Materials, pages 280-283, Hyannis, Massachusetts, USA, 1997. IEEE Press.
10. G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr. Monte Carlo Simulation of Electron Transport in Doped Silicon. In Proc. High Performance Computing on the Information Superhighway-HPC Asia 97, pages 444-449, Seoul, Korea, 1997. IEEE Computer Society Press.