1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1155-1161

  Ustinov, V M ^a   Zhukov, A E ^a   Maleev, N A ^a   Kovsh, A R ^a   Mikhrin, S S ^a   Volovik, B V ^a   Musikhin, Yu G ^a   Shernyakov, Yu M ^a   Maximov, M V ^a   Tsatsul'nikov, A F ^a   Ledentsov, N N ^a   Alferov, Zh I ^a   Lott, J A ^b   Bimberg, D ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398766     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01006-5     Document Type: Conference Paper

References (11)