Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser

IEEE Photonics Technology Letters

Volumn 12, Issue 3, 2000, Pages 227-229

  Huang, Xiaodong ^a   Stintz, A ^a   Hains, C P ^a   Liu, G T ^a   Cheng, Julian ^a   Malloy, K J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GROUND STATE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

SINGLE-LAYER QUANTUM-DOT LASERS; VERY LOW THRESHOLD CURRENT DENSITY;

INTEGRATED OPTOELECTRONICS;

EID: 0033898964     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.826896     Document Type: Article

References (11)

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