![]() |
Volumn 42, Issue 17, 2009, Pages
|
Diagnostic and processing in SF6 RF remote plasma for silicon etching
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ATOMIC FLUORINE;
CONSTANT PRESSURES;
ELECTRON DENSITIES;
ETCH RATES;
ETCHED SURFACE;
FLUORINE ATOMS;
HOLLOW CATHODE DISCHARGE;
ION FLUXES;
OPTICAL REFLECTANCE;
PHOTOLUMINESCENCE PROPERTIES;
PLASMA POTENTIAL;
REMOTE PLASMAS;
RF REMOTE PLASMA;
RF-POWER;
SILICON ETCHING;
SILICON SURFACES;
SUBSTRATE HOLDERS;
VISIBLE PHOTOLUMINESCENCE;
ATOMIC SPECTROSCOPY;
ELECTRIC DISCHARGES;
EMISSION SPECTROSCOPY;
ETCHING;
FLOW RATE;
FLUORINE;
INTEGRATED OPTOELECTRONICS;
IONS;
OPTICAL EMISSION SPECTROSCOPY;
OPTICAL PROPERTIES;
ORGANIC POLYMERS;
PHOTOLUMINESCENCE;
PLASMA DIAGNOSTICS;
PLASMA PROBES;
PLASMAS;
REFLECTION;
SUBSTRATES;
|
EID: 70249118959
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/17/175206 Document Type: Article |
Times cited : (20)
|
References (60)
|