Plasma etching of poly-Si/SiO2/Si structures: Langmuir-probe and optical-emission-spectroscopy monitoring

Russian Microelectronics

Volumn 36, Issue 3, 2007, Pages 179-192

  Rudenko, K V ^a   Myakon'kikh, A V ^a   Orlikovsky, A A ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TEMPERATURE; GATES (TRANSISTOR); LANGMUIR PROBES; MOS CAPACITORS; OPTICAL EMISSION SPECTROSCOPY; PLASMA ETCHING; SILICA;

ELECTRON ENERGY DISTRIBUTION FUNCTION (EEDF); ETCH RATES; OPTICAL ACTINOMETRY;

POLYSILICON;

EID: 34249668230     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063739707030079     Document Type: Article

References (36)

1. International Technology Roadmap for Semiconductors, 1999, 2001, 2005 Editions.
2. Orlikovskii, A.A. and Rudenko, K.V., In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III, Mikroelektronika, 2001, vol. 30, no. 5, pp. 323-344
3. [Russ. Microelectron. (Engl. Transl.), vol. 30, no. 5, pp. 275-294].
4. Orlikovskii, A.A. and Rudenko, K.V., In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects. Part I, Mikroetektronika, 2001, vol. 30, no. 2, pp. 85-105
5. [Russ. Microelectron. (Engl. Transl.), vol. 30, no. 2, pp. 69-87].
6. Valiev, K.A., Orlikovsky, A.A., Rudenko, K.V., Semin, Yu.E, and Sukhanov, Ya.N., RF Patent 2 248 645, Byull. FIPS, 2005, no. 8.
7. Zaidel', A.N., Prokof'ev, V.K., Raiskii, S.M., Slavnyi, V.A., and Shreider, E.A., Tables of Spectral Lines, New York: IFI/Plenum, 1990.
8. Pearse, R.W.B. and Gaydon, A.G., The Identification of Molecular Spectra, New York: Wiley, 1976, 4th ed.
9. Hebner, G.A. and Abraham, I.C., J. Appl. Phys., 2002, vol. 91, no. 12, pp. 9539-9546.
10. 2 on Silicon, Vestn. Mask. Univ., Ser. 3: Fiz., Astron., 1995, vol. 36, no. 6, pp. 18-22.
11. Maishev, Yu.P., Farenik, V.I., Shevchenko, A.V., Budyanskii, A.M., Dudin, S.V., and Zykov, A.V., Langmuir-Probe Plasma Diagnostics in Ion-Beam or Plasma Etching, in Tr. FTIAN, 1999, vol. 15, pp. 86-116.
12. Lieberman, M.A. and Lichtenberg, A.J., Principles of Plasma Discharges and Materials Processing, New York: Wiley, 2005, 2nd ed.
13. Langmuir Probe Analysis for High Density Plasmas, Chen, F.F., Ed., Los Angeles: University of California, 2000.
14. Kono, A., Negative Ions in Processing Plasmas and Their Effect on Plasma Structure, Appl. Surf. Sci., 2002, vol. 192, pp. 115-134.
15. 6 Helicon Discharge, Plasma Sources Sci. Technol., 1999, vol. 8, pp. 561-566.
16. 3 Plasmas Used for Plasma Immersion Ion Implantation, Plasma Process. Polym., 2005, vol. 2, pp. 472-479.
17. Rudenko, K.V., Myakon'kikh, A.V., Orlikovsky, A.A., and Pustovit, A.N., New Method for the Langmuir Probe Diagnostics of Polymerizing Plasmas, Mikroelektronika, 2007, vol. 36, no. 1 (in press)
18. [Russ. Microelectron. (Engl. Transl.), vol. 36, no. 1 (in press)].
19. Orlikovsky, A.A., Rudenko, K.V., and Averkin, S.N., Fine-Line Plasma-Enhanced Processes on the Basis of a Set of Pilot Units with a Scalable Inductively Coupled Plasma Source for Use in Microelectronics, Khim. Vys. Energ., 2006, vol. 40, no. 3, pp. 220-232
20. [High Energy Chem. (Engl. Transl.), vol. 40, no. 3, pp. 182-193].
21. Ershov, A.P., Dovzhenko, V.A., Kuzovnikov, A.A., and Oks, S.N., Processing the Current-Voltage Characteristics of a Langmuir Probe in a Non-Maxwellian Plasma, Fiz. Plazmy, 1981, vol. 7, no. 3, p. 609.
22. Coburn, J.W. and Chen, M., Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density, J. Appl. Phys., 1980, vol. 51, no. 6, pp. 3134-3136.
23. 2-N Mixtures, J. Appl. Phys., 1994, vol. 75, no. 1, pp. 104-114.
24. 4 Plasmas Measured by Actinometry, Plasma Sources Sci. Technol., 1994, vol. 3, p. 154.
25. Kawai, Y., Sasaki, K., and Kadota, K., Comparison of Fluorine Atom Density Measured by Actinometry and Vacuum Ultraviolet Absorption Spectroscopy, Jpn. J. Appl. Phys., Part 2, 1997, vol. 36, no. 9A/B, pp. L1261-L1264.
26. 4 RF Discharges by Two-Photon Laser-Induced Fluorescence and Optical Emission Spectroscopy, J. Chem. Phys., 1986, vol. 84, pp. 2668-2674.
27. Kagan, Yu.M. and Perel', V.I., Examining Plasmas with Probes, Usp. Fiz. Nauk, 1962, vol. 81, no. 3, pp. 409-452.
28. Park, B.-K., Kim, D.-G., and Kim, G.-H., Analysis of Langmuir Probe Data Using Wavelet Transform, IEEE Trans. Plasma Sci., 2004, vol. 32, no. 2, pp. 355-361.
29. Savitzky, A. and Golay, M.J.E., Smoothing and Differentiation of Data by Simplified Least Squares Procedures, Anal. Chem., 1964, vol. 36, no. 8, pp. 1627-1639.
30. Ershov, A.P. and Kuzovnikov, A.A., Electron Energy Distribution Function of a Low-Pressure RF Xenon Plasma, Fiz. Plazmy, 1985, vol. 11, no. 5, pp. 618-621.
31. Godyak, V.A., Piejak, R.B., and Alexandrovich, B.M., Electron Energy Distribution Function Measurements and Plasma Parameters in Inductively Coupled Argon Plasma, Plasma Sources Sci. Technol., 2002, vol. 11, pp. 525-543.
32. 3 Plasmas for Microelectronic Technology Applications, in Proc. SPIE - Int. Soc. Opt. Eng., 2004, vol. 5401, pp. 55-63.
33. Hwang, G.S. and Giapis, K.P., Pattern-Dependent Charging in Plasmas: Electron Temperature Effects, Phys. Rev. Lett., 1997, vol. 79, pp. 845-848.
34. Flamm, D.L., Donnelly, V.M., and Mucha, J.A., The Reaction of Fluorine Atoms with Silicon, J. Appl. Phys., 1981, vol. 52, no. 5, pp. 3633-3639.
35. 2/Si Plasma Etching by the Optical Emission Actinometry, in Proc. FTIAN, 2006, vol. 16, pp. 32-37.
36. 6 Inductively Coupled Plasma Using a Langmuir Probe, Appl. Phys. Lett., 2001, vol. 79, no. 18, pp. 2874-2876.