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Volumn 42, Issue 8, 2009, Pages
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Effect of electron energy probability function on plasma CVD/modification in a 13.56 MHz hollow cathode discharge
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON GAS PRESSURE;
ARGON PLASMAS;
CHEMICAL GAS PHASE REACTIONS;
DEPOSITED FILMS;
ELECTRON DENSITIES;
ELECTRON ENERGY PROBABILITY FUNCTIONS;
EX SITU;
FLOATING POTENTIALS;
HEXAMETHYL DISILOXANE;
HOLLOW CATHODE DISCHARGE;
LANGMUIR PROBE DIAGNOSTICS;
MODIFIED SURFACES;
PLASMA PARAMETER;
PLASMA POTENTIAL;
PLASMA SURFACE MODIFICATIONS;
PLASMA-CVD;
POLYMER SURFACES;
REMOTE PLASMA TREATMENT;
REMOTE PLASMAS;
REMOTE REGIONS;
RUTHERFORD BACK-SCATTERING;
SUBSTRATE BIAS;
SUBSTRATE HOLDERS;
ARGON;
CHEMICAL MODIFICATION;
DEPOSITION;
DIAMOND FILMS;
DISSOCIATION;
ELECTRON ENERGY LEVELS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRON TEMPERATURE;
ELECTRON TRANSITIONS;
EMISSION SPECTROSCOPY;
HELIUM;
INDUCTIVELY COUPLED PLASMA;
OPTICAL EMISSION SPECTROSCOPY;
PLASMA DEPOSITION;
PLASMA DEVICES;
PLASMA DIAGNOSTICS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PROBES;
PROCESS CONTROL;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
SUBSTRATES;
ELECTRIC DISCHARGES;
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EID: 70350445537
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/8/085201 Document Type: Article |
Times cited : (12)
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References (46)
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