Lithography simulation: Modeling techniques and selected applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7390, Issue , 2009, Pages

  Erdmann, Andreas ^a   Fühner, Tim ^a   Shao, Feng ^a   Evanschitzky, Peter ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Computational lithography; Double exposure and patterning; Euv Lithography; Image modeling; Lithography masks; Lithography Simulation; Photoresist modeling

Indexed keywords

COMPUTATIONAL LITHOGRAPHY; DOUBLE EXPOSURE AND PATTERNING; EUV-LITHOGRAPHY; IMAGE MODELING; LITHOGRAPHY MASKS; LITHOGRAPHY SIMULATION;

COMPUTATIONAL EFFICIENCY; ELECTROMAGNETIC FIELDS; FINITE DIFFERENCE TIME DOMAIN METHOD; GLOBAL OPTIMIZATION; METHOD OF MOMENTS; OPTIMIZATION; PHOTORESISTORS; SIMULATORS; SURFACE TREATMENT; ULTRAVIOLET DEVICES;

LITHOGRAPHY;

EID: 69949157001     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829409     Document Type: Conference Paper

References (52)

1. Sheats J.R. and Smith B.W.: "Microlithography: science and technology", Marcel Dekker Inc., 1998.
2. Levinson H.J.: "Principles of lithography", SPIE Press Monographs PM146, 2005.
3. Wong A.K.K.: "Optical imaging in projection microlithography", SPIE Tutorial Text T66, 2005.
4. Mack C.A.: "Fundamental principles of microlithography: The science of microfabrication", John Wiley & Sons, 2007.
5. Wong A.K. and Neureuther A.R.: "Mask topography effects in projection printing of phase - shifting masks", IEEE Trans. on Electron Devices 41 (1994) 895.
6. Erdmann A.: "Mask modeling in the low k1 and ultrahigh NA regime: Phase and polarization effects", Proc. SPIE 5835 (2005) 69.
7. Nyyssonen D.: "The theory of optical edge detection and imaging of thick layers", J. Opt. Soc. Am. 72 (1982) 1425.
8. Lucas K., Tanabe H., and Strojwas A.J.: "Efficient and rigorous three-dimensional model for optical lithography simulation", J. Opt. Soc. Am. A13 (1996) 2187.
9. Moharam M.G. and Gaylord T.K.: "Rigorous coupled-wave analysis of planar grating diffraction", J. Opt. Soc. Am. 71 (1981) 811.
10. Evanschitzky P. and Erdmann A.: "Three dimensional EUV simulations: a new mask near field and imaging simulation system", Proc. SPIE 5992 (2005) 1546.
11. Adam K. and Neureuther A.R.: "Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering", J. Microlithogr. Microfabrication Microsyst. 1 (2002) 253.
12. Shao F., Evanschitzky P., Reibold D., and Erdmann A.: "Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique", Proc SPIE 6792 (2008) 679206.
13. Erdmann A., Evanschitzky P., Citarella G., Fühner T., and De Bisschop P.: "Rigorous mask modeling using waveguide and FDTD methods: An assessment for typical hyper NA imaging problems", Proc. SPIE, 6283 (2006) 628319.
14. Erdmann A., Citarella G., Evanschitzky P., Schermer H., Philipsen V., and De Bisschop P.: "Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask", Proc. SPIE 6154 (2006) 167.
15. Erdmann A. and Evanschitzky P.: "Rigorous electromagnetic field mask modeling and related lithographic effects in the low k1 and ultrahigh NA regime", Journal of Micro/Nanolithography, MEMS, and MOEMS, 6 (2007) 031002.
16. Ruoff, J., Neumann J., Smitt-Weaver E., van Setten E., le Masson N., Progler C. , and Geh, B.: "Polarization induced astigmatism caused by topographic masks", Proc. SPIE 6730 (2007) 67301T.
17. Lam M., Adam K., and Neureuther A.: "Domain decomposition methods for simulation of printing and inspection of phase defects", Proc. SPIE 5040 (2003) 1492.
18. Hopkins H.H.: "On the diffraction theory of optical image", Proc. R. Soc. London, Ser. A 217 (1953) 408.
19. Cobb N.B.: "Fast optical and optical proximity correction in optical lithography and inspection", PhD thesis, University of Berkeley 1998.
20. Yamazoe K.: "Computation theory of partially coherent imaging by stacked pupil shift matrix", J. Opt. Soc. Am. A 25 (2008) 3111.
21. Totzeck M., Gräupner P., Heil T., Göhnermeier A., Dittmann O., Krähmer D., Kamenov V., Ruoff J., and Flagello D.: "Polarization influence on imaging", J. Microlithogr. Microfabrication Microsyst. 4 (2005) 031108.
22. Flagello D.G., Milster T., and Rosenbluth A.E.: "Theory of high-NA imaging in homogenuous thin films", J. Opt. Soc. Am. A 13 (1996) 53.
23. Shao F., Evanschitzky P., Fühner T., and Erdmann A.: "Efficient simulation and optimization of wafer topographies in double patterning", Proc. SPIE 7242 (2009) 72420O.
24. Dill F.H., Hornberger W.P., Hauge P.S., and Shaw J.M.: "Characterization of positive photoresist", IEEE Trans. Electron Devices, ED-22 (1975) 445.
25. Evanschitzky P., Erdmann A., and Fühner T.: "Extended Abbe approach for fast and accurate lithography imaging simulations", Proc. SPIE in print.
26. Steward M.D., Patterson K, , Somervell M.H., and Willson C.G.: "Imaging materials: a view of the future", Journal of Physical Organic Chemistry 13 (2000) 767.
27. Petersen J.S., Mack C.A., Thackersay J.W., Sinta R., Fedynyshyn T.H. Mori J.M., Byers J.D. and Miller D.A.: "Characterization and modeling of a positive acting chemically amplified resist", Proc. SPIE 2438 (1995) 153.
28. Mack C.A.: "Development of positive photoresists", Journal of the Electrochemical Society, 134 (1987) 148.
29. Robertson S., Mack C., and Maslow M.: "Towards a universal resist dissolution model for lithography simulation", Proc. SPIE 4404 (2001) 111.
30. Scheckler E.W., Tam N.N., Pfau A.K., and Neureuther A.R.: "An efficient volume removal algorithm for practical threedimensional lithography simulation with experimental verification", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 12 (1993) 1345.
31. Sethian J.A. and Adalsteinsson D.: "An overview of level set methods for etching, deposition, and lithography development", IEEE Transactions on Semiconductor Devices 10 (1997) 167.
32. Gallatin G.M., Naulleau P., Niakoula D., Brainard R., Hassanein E., Matyi R.M. Thackeray J., Spear K., and Dean K.: "Resolution, LER, and sensitivity limitations of photoresists", Proc. SPIE 6921 (2008) 69211E.
33. Schnattinger T. and Erdmann A.: "A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography", Proc. SPIE 6923 (2008) 69230R.
34. Patsis G.P., Drygiannakis D., Raptis I., Gogolides E., and Erdmann A.: "Advanced lithography models for strict process control in the 32nm technology node", Microelectronic Engineering, in print.
35. Fühner T., Schnattinger T., Ardelean G., and Erdmann A.: "Dr.LiTHO - a development and research lithography simulator", Proc. SPIE 6520 (2007) 65203F.
36. www.drlitho.de.
37. Wong A.K.: "Resolution enhancement techniques in optical lithography", SPIE Tutorial Text TT47, 2001.
38. Rosenbluth A.E., Melville D.O., Tian K., Bagheri S., Tirapu-Azpiroz J., Lai K., Waechter A., Inoue T., Ladanyi L., Barahona F., Scheinberg K., Sakamoto M., Muta H., and Hibbs M.S.: "Intensive optimization of masks and sources for 22-nm lithography", Proc. SPIE 7274 (2009) 724209.
39. Fühner T., Erdmann A., and Seifert S.: "A direct optimization approach for lithographic process conditions", Journal of Micro/Nanolithography, MEMS, and MOEMS, 6 (2007) 031006.
40. Erdmann A., Fühner T., and Evanschitzky P.: "Optimization of mask absorber stacks and illumination settings for contact hole imaging", Proc. SPIE 7028 (2008) 70283L.
41. Petersen J.S., Greenway R.T., Fühner T., Evanschitzky P., Shao F., and Erdmann A.: "Exploration of linear and non-linear double exposure techniques by simulation", Proc. SPIE 7242 (2009) 72421V.
42. Byers J., Zimmerman P., Rice B., Lee S., Jen K., Willson C., and Turro N.: "Double exposure materials simulation study of feasibility", 24th Conference of Photopolymer Science and Technology, June 2007 Tokyo, 2007.
43. Erdmann A., Evanschitzky P., Fühner T., Schnattinger T., Xu C.B., and Szmanda C.: "Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios", Proc. SPIE 6924 (2008) 692452.
44. Perret D., Simon J., Gaugiran S., Cardolaccia T., Pikon A., Guierin I., Lapeyere C., Derrough S., Szmanda C., and Trefonas P.: "Materials for double patterning strategies: Development and application", Microelectroonic Engineering, in print.
45. Gronheid R., Hendrickx E., Wiaux V., Maenhoudt M., Goethals M., Vandenberghe G., and Ronse K.: "Lithography options for the 32nm half pitch node and their implications on resist and material technology", Proc. SPIE 6827 (2007) 68261V.
46. Evanschitzky P., Erdmann A., Besacier M., and Schiavone P.: "Simulation of extreme ultraviolet masks with defective multilayers", Proc. SPIE 5130 (2003) 1035.
47. Erdmann A., Fühner T., and Evanschitzky P.: "Mask diffraction analysis and optimization for EUV masks", Proc. SPIE 7271 (2009) 72711E.
48. Meliorisz B. and Erdmann A.: "Simulation of proximity printing", Journal of Micro/Nanolithography, MEMS, and MOEMS 6 (2007) 023006.
49. Meliorisz B., Partel S., Schnattinger T., Fühner T., Erdmann A., and Hudek P.: "Investigation of high-resolution contact printing", Microelectronic Engineering 85 (2008) 744.
50. Rumpf R.C. and Johnson E.G.: "Fully three-dimensional modelling of the fabrication and behavior of photonic crystals formed by holographic lithography", J. Opt. Soc. Am A 21 (2004) 1703.
51. Hermatschweiler M. and Arnold S.: "3D-Strukturierung durch Laserlithographie", Photonik, 6 (2008) 54.
52. Wong S.H.E.: "Arsenic trisulfide inorganic photoresist for three-dimensional lithography", PhD-thesis, Universität Karlsruhe, 2008.