Rigorous electromagnetic field mask modeling and related lithographic effects in the low k1 and ultrahigh numerical aperture regime

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 3, 2007, Pages

  Erdmann, Andreas ^a   Evanschitzky, Peter ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Integrated circuits; Lithography simulation; Mask polarization; Resolution; Rigorous electromagnetic field simulation

Indexed keywords

LITHOGRAPHY; MATHEMATICAL MODELS; OPTICAL PROPERTIES; POLARIZATION; TOPOGRAPHY;

MASK POLARIZATION; RIGOROUS ELECTROMAGNETIC FIELD SIMULATION;

ELECTROMAGNETIC FIELDS;

EID: 40049107728     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2778447     Document Type: Article

References (36)