Optimization of mask absorber stacks and illumination settings for contact hole imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Erdmann, Andreas ^a   Fühner, Tim ^a   Evanschitzky, Peter ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Lithography simulation; Mask and source optimization; Mask materials

Indexed keywords

AEROSPACE APPLICATIONS; COMPUTER NETWORKS; INTEGER PROGRAMMING; MASKS; MATHEMATICAL MODELS; MATHEMATICAL PROGRAMMING; MULTITASKING; OPTIMIZATION; PHOTOLITHOGRAPHY; SODIUM; TECHNOLOGY;

(HI-BI) WAVEGUIDE; ARF SCANNER; CONTACT HOLE (CH); CONTACT HOLE IMAGING; DENSE ARRAYS; EFFICIENT INTERACTION; FEATURE SIZES; FRAUNHOFER (CO); GLOBAL OPTIMIZATION TECHNIQUES; ILLUMINATION SETTINGS; IN ORDER; LITHOGRAPHY SIMULATIONS; MASK ABSORBER; MASK GEOMETRY; MASK TECHNOLOGY; MASK TOPOGRAPHY EFFECTS; NEXT-GENERATION LITHOGRAPHY (NGL); OPTIMIZATION APPROACH (OOA); PERFORMANCE IMPROVEMENTS; PHOTO MASKING; PROCESS PERFORMANCE; PROCESS WINDOWS; WATER IMMERSION;

GLOBAL OPTIMIZATION;

EID: 45549103337     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793128     Document Type: Conference Paper

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