Validity of the Hopkins approximation in simulations of hyper NA (NA>1) line-space structures for an attenuated PSM mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 I, Issue , 2006, Pages

  Erdmann, Andreas ^a   Citarella, Giuseppe ^a   Evanschitzky, Peter ^a   Schermer, Hans ^a   Philipsen, Vicky ^b   De Bisschop, Peter ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b IMEC   (Belgium)

Author keywords

Attenuated PSM; Hopkins approximation; Hyper NA; Immersion lithography; Simulation

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DIFFRACTION; IMAGE QUALITY; MATHEMATICAL MODELS; POLARIZATION;

ATTENUATED PSM; HOPKINS APPROXIMATIONS; HYPER NA; IMMERSION LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 33745780729     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655561     Document Type: Conference Paper

References (7)

1. Erdmann A., Evanschitzky P., De Bisschop P.: "Mask and Wafer Topography Effects in Immersion Lithography", Proc. SPIE 5754 (2005) 383.
2. Pistor T., Neureuther A.R., and Socha R.J.: "Modeling Oblique Incidence Effects in Photomasks", Proc. SPIE 4000 (2000) 228.
3. Hopkins H.H.: "On the Diffraction Theory of Optical Images," Proc. Roy. Soc. (Lond.) A217 (1953) 408.
4. Erdmapn A.: "Mask Modeling in the Low k1 and Ultrahigh NA Regime: Phase and Polarization Effects", BACUS NEWS 21 (April 2005)1.
5. Köhle R.: "Mask Diffraction at Conical Off-Axis Illumination", 3. IISB Lithography Simulation Workshop, Pommersfelden, September 2005.
6. Schermer J., Evanschitzky P., and Erdmann A.: "Rigorous Mask Modeling Beyond the Hopkins Approach", 22. European Mask and Lithography Conference (EMLC), Dresden 2006.
7. P. Evanschitzky, A. Erdmann, "Three Dimensional EUV Simulations - A New Mask Near Field and Imaging Simulation System", Proc. SPIE 5992 (2005).