Lithography options for the 32nm half pitch node and their implications on resist and material technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6827, Issue , 2008, Pages

  Gronheid, Roel ^a   Hendrickx, Eric ^a   Wiaux, Vincent ^a   Maenhoudt, Mireille ^a   Goethals, Mieke ^a   Vandenberghe, Geert ^a   Ronse, Kurt ^a  

^a IMEC   (Belgium)

Author keywords

193nm immersion; Chemically amplified resist; Double patterning; EUV; LWR; Sensitivity

Indexed keywords

REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE; SENSITIVITY ANALYSIS; SPECIFICATIONS;

193NM IMMERSION; CHEMICALLY AMPLIFIED RESIST; DOUBLE PATTERNING; LWR;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 43249083163     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.779273     Document Type: Conference Paper

References (12)

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