Mechanical effects of polishing pad in copper electrochemical mechanical deposition for planarization

Current Applied Physics

Volumn 10, Issue 1, 2010, Pages 299-304

  Jeong, Sukhoon ^a   Lee, Sangjik ^a   Park, Boumyoung ^b   Kim, Hyoungjae ^c   Kim, Sungryul ^c   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Dongnam Technology Service Division   (South Korea)

Author keywords

Copper (Cu); Electrochemical mechanical deposition (ECMD); Mechanical properties; Polishing pad

Indexed keywords

ELECTROCHEMICAL MECHANICAL DEPOSITION; ELECTROCHEMICAL MECHANICAL DEPOSITION (ECMD); ELECTROCHEMICAL PLATING; MATERIAL SURFACE; MECHANICAL COMPONENTS; MECHANICAL EFFECTS; MECHANICAL SWEEPING; PLANARIZATION; PLATING RATES; POLISHING PAD; POLISHING PADS; WITHIN WAFER NON UNIFORMITIES;

BRUSHES; COPPER; ELECTROCHEMICAL PROPERTIES; MECHANICAL PROPERTIES; PLATING; POLISHING;

MECHANISMS;

EID: 69249206615     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.06.011     Document Type: Article

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