Electro-chemical mechanical deposition for planarization of Cu interconnect

Key Engineering Materials

Volumn 326-328 I, Issue , 2006, Pages 389-392

  Jeong, Sukhoon ^a   Seo, Heondeok ^a   Park, Boumyoung ^a   Park, Jaehong ^b   Park, Sungmin ^a   Kim, Sangchul ^c   Kim, Keeho ^c   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

^b Nitta Haas Inc   (Japan)

^c Dongbu Electronics   (South Korea)

Author keywords

Cu; ECMD; Gap filling; Planarization

Indexed keywords

ADDITIVES; CONDUCTIVE FILMS; DEPOSITION; ELECTROCHEMISTRY; ELECTROLYTES; SEMICONDUCTOR MATERIALS;

ELECTRO CHEMICAL MECHANICAL DEPOSITION (ECMD); GAP FILLING; PLANAR LAYERS; PLANARIZATION;

COPPER;

EID: 33751533504     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-415-4.389     Document Type: Conference Paper

References (4)

1. Uziel Landau, "Copper Metallization of Semiconductor Interconnects-Issues and Prospects", Electrochemical Society Meeting, 2000.
2. Bülent Basol, Cyprian Uzoh, Homayoun Talieh, Tony Wang, George Guo, Serkan Erdemli David Mai, Paul Lindquist, Jeff Bogart, Mario Cornejo, Manuel Cornejo and Erol Basol, "Planar Copper electrodeposition and Electropolishing Technique:, The national AIChE Meeting, San Francisco, CA., Symposium on "Metalllization in Semiconductor Device Fabrication", pp. 192, Nov. 17-18, 2003.
3. P. H. Haumesser, M.Cordeau, S.Maitrejean, T. Mourier, L.G.Gosset, W. F. A. Besling, G.Passemard, J. Torres, "Copper metallization for advanced interconnects : the electrochemical revolution", IEEE, 2000.
4. B. M. Basol, C. E. Uzoh, H. Talieh, D. Young, P. Lindequist, T. Wang and M. Cornejo, "Electrochemical mechanical deposition Technique for Semiconductor Interconnect Application", Miectoelectronic Engineering, Vol. 64, p. 452, March 3, 2002.