Pad surface treatment to control performance of chemical mechanical planarization

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 1028-1033

  Park, Jaehong ^a,b   Juno, Haedo ^a   Yoshida, Koichi ^b   Kinoshita, Masaharu ^b  

^a Pusan National University   (South Korea)

^b Nitta Haas Inc   (Japan)

Author keywords

AFM; Break in; Buffing; CMP; Conditioning; Polishing pad; Porosity; Profile; Removal rate; Uniformity; Zeta potential

Indexed keywords

ABRASIVES; ABS RESINS; BUFFING; CHEMICAL POLISHING; ELASTICITY; POLISHING; PROCESS CONTROL; SURFACE ROUGHNESS; SURFACE TREATMENT; VISCOELASTICITY; VISCOSITY; ZETA POTENTIAL;

AFM; BREAK-IN; CMP; CONDITIONING; POLISHING PAD; PROFILE; REMOVAL RATE; UNIFORMITY;

CHEMICAL MECHANICAL POLISHING;

EID: 54249139724     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1028     Document Type: Article

References (5)

1. S. Huey: Proc. Advanced Semiconductor Manufacturing Conf./ Workshop, 1999, p. 54.
2. S. H. Lee: Proc. IEEE Int. Symp. Semiconductor Manufacturing (ISSM 2005), 2005, p. 173.
3. A. S. Lawing: Proc. 9th ULSI Multilevel Interconnection Conf. (CMP-MIC), 2005, p. 33.
4. G. P. Muldowney: Proc. 9th ULSI Multilevel Interconnection Conf. (CMP-MIC), 2005, p. 156.
5. J. Luo: Proc. IEEE Semiconductor Manufacturing Conf., 2003, p. 45.