In situ characterization of Cu CMP slurry and defect reduction using IR thermal camera

Microelectronic Engineering

Volumn 75, Issue 3, 2004, Pages 257-262

  Chan, Chia Hao ^a   Chen, Jem Kun ^a   Chang, Feng Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Cu CMP; Defect reduction; In situ slurry characterize; IR thermal camera

Indexed keywords

CU CMP; DEFECT REDUCTION; IN SITU SLURRY CHARACTERIZE; IR THERMAL CAMERA;

CHEMICAL POLISHING; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; GRAIN BOUNDARIES; METALLIC FILMS; SCANNING ELECTRON MICROSCOPY; SLURRIES; ULSI CIRCUITS;

COPPER;

EID: 4344634361     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.05.013     Document Type: Article

References (8)

1. M.T. Bohr, in: Proceedings of the 1995 IEEE International Electron Device Meeting, 1995, pp. 241-42.
2. K.H. Holland et al., Achieving CMP Manufacturability in the Current Aluminum and Future Copper Damascene Interconnection Technologies, Semiconductor Fabtech, eigth ed., 1998, p. 217.
3. P. Stocckl, B. Saville, J. Kavanagh, T. Dellwig, Advanced Cu CMP defect excursion control for leading edge micro-processor manufacturing in: Advanced Semiconductor Manufacturing IEEE/SEMI Conference and Workshop, 2002, pp. 92-97.
4. P. Wrschka, J. Hernandez et al., Electrochem. Soc. 147 (2000) 706.
5. Wang Xin, Wang Hongying, Liu Yuling, Solid State Integr. Circuit Technol. (2001) 369-371.
6. G.B. Alers, D. Dornisch, J. Siri, K. Kattige, L. Tam, E. Broadbent, G.W. Ray, Trade-off between reliability and post-CMP defects during recrystallization anneal for copper damascene interconnects, in: Reliability Physics Symposium, Proceedings of the 39th Annual 2001 IEEE International, 2001, pp. 350-354.
7. H.W. Chiou, et al., CMP-MIC (2001) 131.
8. Alex Shieh, S.Y. Shih, M.S. Jang, J.X. Lin, Jack Chen, Y.L. Hwang, C.T. Huang, C.C. Hsueh, Henry Chung, CMP-MIC (2001).