Material removal model for chemical-mechanical polishing considering wafer flexibility and edge effects

Wear

Volumn 257, Issue 5-6, 2004, Pages 496-508

  Seok, Jongwon ^a   Sukam, Cyriaque P ^a   Kim, Andrew T ^a   Tichy, John A ^a   Cale, Timothy S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

CMP; Edge effects; Material removal rate; Wafer flexibility

Indexed keywords

ALGORITHMS; CHEMICAL POLISHING; DEFORMATION; METHOD OF MOMENTS; REMOVAL; STRESS ANALYSIS;

BULK PAD DEFORMATION; CHEMICAL-MECHANICAL POLISHING; PLANARIZATION; SLURRY FLOW;

MATERIALS;

DEFORMATION; INDUSTRIAL APPLICATION; MODEL; POLISHING;

EID: 3242693587     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2004.01.011     Document Type: Article

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