Copper voids improvement for the copper dual damascene interconnection process

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 566-571

  Wang, T C ^a   Wang, Y L ^b,c   Hsieh, T E ^a   Chang, S C ^b   Cheng, Y L ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

A. Semiconductors; A. Thin films; D. Defects; D. Electrical properties

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CORROSION; ELECTRIC PROPERTIES; ELECTROPLATING; GRAIN SIZE AND SHAPE; THIN FILMS;

COPPER VOIDS; INTERCONNECTION PROCESS;

COPPER COMPOUNDS;

EID: 38749096642     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.119     Document Type: Article

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