RF performance assessment of AlGaN/GaN MISHFET at high temperatures for improved power and pinch-off characteristics

Microwave and Optical Technology Letters

Volumn 51, Issue 8, 2009, Pages 1942-1949

  Aggarwal, Ruchika ^a   Agrawal, Anju ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MISHFET; Carrier mobility; Cut off frequency; High temperature; Pinch off characteristics; Saturation output power; Saturation velocity

Indexed keywords

ALGAN/GAN MISHFET; HIGH TEMPERATURE; PINCH-OFF CHARACTERISTICS; SATURATION OUTPUT POWER; SATURATION VELOCITY;

BIOACTIVITY; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; THERMAL EFFECTS;

CARRIER MOBILITY;

EID: 67749106187     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.24461     Document Type: Article

References (27)

1. J. Burm, K. Chu, W. J. Schaff, L. F. Eastmann, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, 0.12μm gate III-V Nitride HFETs with high contact resistances, IEEE Electron Device Lett 18(1997), 141-143.
2. R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. A. Khan, and M. S. Shur, High temperature performance of AlGaN/GaN HFETs on SiC substrates, IEEE Electron Device Lett 18(1997), 492-494.
3. Y. F. Wu, D. Kapolner, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, High Al-Content AlGaN≥aN HEMTs on SiC substrates with very-high power performance, IEDM 48(1999), 16.7.1-16.7.3.
4. M. M. Wong, U. Chowdhury, D. Sicault, D. T. Becher, J. C. Denyszy, T. G. Zhu, M. Feng, and R. D. Dupuis, Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition, IEEE Electron Lett 38(2002), 428-429.
5. M. Micovic, N. X. Nguyen, P. Janke, W. S. Wong, P. Hashimoto, L. M. McCray, and C. Nguyen, GaN/AlGaN high electron mobility transistors with fτ of 110 GHz, IEEE Electron Lett 36(2000), 358-359.
6. W. S. Tan, P. A. Houston, G. Hill, R. J. Airey, and P. J. Parbook, Electrical characteristics of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors on sapphire substrates, J Electron Mater 32(2003), 350-354.
7. M. A. Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, Insulating Gate III Qq-N heterostructure field-effect transistors for high-power microwave and switching applications, IEEE Microwave Theory Tech 51(2003), 624-633.
8. D. W. Chou, K. W. Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, SJ. Chang, and Y. K. Su, AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide, Jpn J Appl Phys 41(2002), L748-L750.
9. S. Ootomo, T. Hoshizume, and H. Hasegawa, Prog Solid State Chem 90(2002).
10. H. Kawai, M. Hara, F. Nakamura, and S. Imanaga, AlN/GaN insulated gate heterostructure FET with regrown n+ GaN ohmic contact, IEEE Electron Lett 34(1998), 592-593.
11. G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, High temperature performance of AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor, Phys Status Solidi A 188(2001), 219-222.
12. A. Koudymov, H. Fatima, G. Simin, J. Yang, M. A. Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska, Maximum current in nitride based heterostructure field effect transistor, Appl Phys Lett 80(2002), 3216-3218.
13. G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A Tarakji, A. Kumar, J. Yang, M. A. Khan, R Gaska, and M. S. Shur, Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging, IEEE Electron Device Lett 22(2001), 53-55.
14. R. Aggarwal, A. Agrawal, M. Gupta, and R. S. Gupta, Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) and its comparison with conventional HFETs for high power microwave applications, Microwave Opt Technol Lett 50(2008), 331-338.
15. R. Aggarwal, A. Agrawal, M. Gupta, and R. S. Gupta, Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency, Solid-State Electron 52(2008), 1610-1614.
16. I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn, Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's, IEEE Electron Device Lett 20(1999), 448-450.
17. Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin, and B. R. Huang, Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET, IEEE Electron Device 50(2003), 1748-1752.
18. C. X. Wang, N. Maeda, M. Hiroki, T. Kobayashi, and T. Enoki, Device performance at elevated temperatures upto 200°C in AlGaN/GaN insulated gate heterostructure field effect transistors with ultrathin Al2O3/Si3N4 bilayer, IMFEDK, Kyoto, 2004, 45-46.
19. V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska, Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors, IEEE Electron Device Lett 24(2003), 541-543.
20. P. J. Pearton, GaN, and related materials, optoelectronic properties of semiconductors and superlattices, vol. 2, Gordon and Breach Science Publishers, Amsterdam, 1997.
21. U. Tisch, B. Meyler, O. Katz, E. Finkman, and J. Salzman, Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures, J Appl Phys 89(2001), 2676-2685.
22. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mtchell, and M. Stutzmann, Two dimensional electron gases induced by spontaneous and piezoelectric polarization undoped and doped AlGaN/GaN heterostructures, J Appl Phys 87(2000), 334-344.
23. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN Heterostructures, J Appl Phys 85(1999), 3222-3233.
24. N. DasGupta and A. DasGupta, An analytical expression for sheet carrier concentration versus gate voltage for HEMT modeling, Solid-State Electron 36(1993), 201-203.
25. T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, GS. Simin, and M. A. Khan, Carrier mobility model for GaN, Solid-State Electron 47(2003), 111-115.
26. Y. Li, Y. Lu, H. Shen, M. Wraback, M. G. Brown, M. Schurman, L. Koszi, and R. A. Stall, Temperature dependence of energy gap in GaN thin film studied by thermomodulation, Appl Phys Lett 70(1997), 2458-2460.
27. G. E. Bunea, S. T. Dunham, and T. D. Moustakas, Modeling of a GaN based static induction transistor, MRS Internet J N S R 4S1 (1999), G6.41.