Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1610-1614

  Aggarwal, Ruchika ^a   Agrawal, Anju ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

gate; AlGaN GaN MISHFET; Cut off frequency; Gate dielectric engineering; T gate; Transconductance; Transconductance generation efficiency

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATE DIELECTRICS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MODEL STRUCTURES; SEMICONDUCTING INDIUM; TRANSCONDUCTANCE;

ALGAN/GAN MISHFET; CUT-OFF FREQUENCY; GATE DIELECTRIC ENGINEERING; T-GATE; TRANSCONDUCTANCE GENERATION EFFICIENCY;

GATES (TRANSISTOR);

EID: 50849089633     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.008     Document Type: Article

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