Modeling of a GaN based static induction transistor

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Bunea, Gabriela E ^a   Dunham, S T ^b   Moustakas, T D ^a  

^a USA   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; DIFFUSION; ELECTRIC POTENTIAL; ELECTRONS; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

DRIFT DIFFUSION EQUATIONS; HEAT FLOW EQUATIONS; STATIC INDUCTION TRANSISTOR; THERMAL BOUNDARY CONDITIONS;

FIELD EFFECT TRANSISTORS;

EID: 0033310670     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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