AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 7 A, 2002, Pages

  Chou, Dei Wei ^a   Lee, Kuan Wei ^a   Huang, Jian Jun ^a   Wu, Hou Run ^a   Wang, Yeong Her ^a   Houng, Mau Phon ^a   Chang, Shoou Jinn ^a   Su, Yan Kuin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN; GaN; Liquid phase deposition; MOSFET; SiO2

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; TRANSCONDUCTANCE;

LIQUID PHASE DEPOSITION;

MOSFET DEVICES;

EID: 0036650709     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l748     Document Type: Article

References (17)