Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures

Journal of Applied Physics

Volumn 89, Issue 5, 2001, Pages 2676-2685

  Tisch, U ^a   Meyler, B ^a   Katz, O ^a   Finkman, E ^a   Salzman, J ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001275895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1341212     Document Type: Article

References (42)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L217 (1996).
2. M. P. Mack, A. C. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. Mishra, L. A. Coldren, and S. P. DenBaars, MRS Internet J. Nitride Semicond. Res. 2, 41 (1997).
3. N. V. Edwards et al., Mater. Sci. Eng., B 50, 134 (1997).
4. G. Yu, H. Ishikawa, M. Umeno, T. Egawa, J. Wantanabe, T. Jimbo, and T. Soga, Appl. Phys. Lett. 72, 2202 (1998).
5. T. Kawashima, H. Yishikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).
6. A. B. Djurisic and E. H. Li, J. Appl. Phys. 85, 2848 (1999).
7. A. B. Djurisic and E. H. Li, Phys. Status Solidi B 216, 199 (1999).
8. M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, Appl. Phys. Lett. 75, 67 (1999).
9. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997).
10. E. Ejder, Phys. Status Solidi A 6, 445 (1971).
11. L. Siozade, S. Colrad, M. Mihailovic, J. Leimarie, A. Vasson, N. Grandjean, L. Leroux, and J. Massies, Phys. Status Solidi B 216, 73 (1999).
12. J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Wills, Phys. Rev. B 52, 8082 (1995).
13. S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Phys. Rev. B 50, 18017 (1994).
14. U. Tisch, J. Salzman, E. Finkman, G. Bahir, W. v. d. Stricht, A. Abare, S. Denbaars, and L. Coldren, European Materials Research Society Spring Meting 98, Strasbourg, France, 1998.
15. C. A. Fenstermaker and F. L. McCrackin, Surf. Sci. 16, 85 (1969).
16. N. V. Edwards, M. D. Bremser, T. W. Weeks, Jr., R. S. Kern, R. F. Davis, and D. E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996).
17. M. D. Bremser, W. G. Perry, N. V. Edwards, T. Jelvala, N. L. Parikh, D. E. Aspnes, and R. F. Davis, Mater. Res. Soc. Symp. Proc. 395, 195 (1996).
18. G. Yu, H. Ishikawa, T. Soga, J. Wantanabe, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 36, L1029 (1997).
19. O. Katz, U. Tisch, B. Meyler, and J. Salzman, The Annual Conference of the Israeli Association for Crystal Growth, Weizman Institute, Rehovot, Israel, 1999.
20. B. C. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA, 1978).
21. Manufactured by SOPRA (Societe de Production et Recherches Appliques), France; Model: GESP (Gonio-Ellipso-Spectro-Photometer).
22. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996).
23. S. Adachi, Phys. Rev. B 35, 7454 (1987).
24. S. Adachi, Phys. Rev. B 38, 12345 (1988).
25. CA = 22.4 meV.
26. A. D. Papadopoulos and E. Anastassaki, Phys. Rev. B 43, 5090 (1991).
27. I. H. Malitson, J. Opt. Soc. Am. 52, 1377 (1962).
28. E. D. Palik, Handbook of Optical Constants II (Academic, New York, 1991).
29. V. A. Savastenko and A. U. Sheleg, Phys. Status Solidi A 48, K135 (1978).
30. S. Lee and A. Wright, Appl. Phys. Lett. 74, 3344 (1999).
31. The influence of the thin GaN buffer layer underneath the AlGaN main layer on the transmission spectra was found to be negligible.
32. E. C. Freeman and W. Paul, Phys. Rev. B 20, 716 (1979).
33. 1-xN samples decreases with increasing x, which might lead to the formation of Urbach bandtails. This might cause a slight underestimation of the band gap.
34. Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strife, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, UK, 1999), and references therein.
35. A. S. Zubrilov, V. I. Nicolaev, D. V. Tvertkov, V. A. Dmitriev, K. G. Irvine, J. A. Edmond, and C. H. Carter, Appl. Phys. Lett. 67, 533 (1995).
36. C. F. Li, Y. S. Huang, L. Malikova, and F. H. Pollak, Phys. Rev. B 55, 9251 (1997).
37. Y. Kan et al., IEEE J. Quantum Electron. OE-23, 2167 (1987).
38. E. O. Kane, The kp Method, Semiconductors and Semimetals, Vol. 1, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1966), p. 75.
39. L. Bergman, M. D. Bremser, W. G. Perry, R. F. Davis, M. Dutta, and R. J. Nemanich, Appl. Phys. Lett. 71, 2157 (1997).
40. Regression analysis of the experimental SE data was also attempted under the assumption Γ=0 for all compositions and temperatures. This lead to analytical expression C(x,T) and A(x,T), in which the temperature dependence and x dependence were independent of each other. Therefore, the advantage of including Γ as an additional free parameter into our SE analysis is the revelation of the interaction between x and T in C(x,T) and A(x,T), rather than the exact determination of the broadening Γ itself.
41. S. Nakamura et al., Appl. Phys. Lett. 73, 832 (1998).
42. In this calculation, we neglected thermal expansion of the waveguide core and thermal tuning of the laser wavelength.