Device performance at elevated temperatures up to 200 °c in AlGaN/GaN insulated gate heterostructure field effect transistors with ultra-thin Al2O3/Si3N4 bilayer

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai

Volumn , Issue , 2004, Pages 45-46

  Wang, Chengxin ^a   Maeda, Narihiko ^a   Hiroki, Masanobu ^a   Kobayashi, Takashi ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; HETEROJUNCTIONS; MIS DEVICES; NITRIDES;

BILAYER INSULATORS; CONDUCTION BAND OFFSET; DEVICE PERFORMANCE; ELEVATED TEMPERATURE; HIGH TEMPERATURE; INTERFACIAL QUALITIES; LARGE DIELECTRIC CONSTANT; REVERSE CONDUCTION;

FIELD EFFECT TRANSISTORS;

EID: 84934296889     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMFEDK.2004.1566400     Document Type: Conference Paper

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