Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition

Electronics Letters

Volumn 38, Issue 9, 2002, Pages 428-429

  Wong, M M ^a   Chowdhury, U ^a   Sicault, D ^a   Becher, D T ^b   Denyszyn, J C ^a   Zhu, T G ^a   Feng, M ^b   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

HETEROJUNCTION FIELD-EFFECT TRANSISTOR; HIGH-FREQUENCY DEVICE MEASUREMENTS; MAXIMUM OSCILLATION FREQUENCY;

GATES (TRANSISTOR);

EID: 0037171927     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020247     Document Type: Article

References (8)

1. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
2. Very-high power density AlGaN/GaN HEMTs
3. AlGaN/AlN/GaN high power microwave HEMT
4. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
5. DC and microwave performance of high-current AlGaN/GaN HFET grown on p-type SiC substrates
6. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz
7. High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance
8. AlGaN/AIN/GaN high-power microwave HEMT