Temperature dependence of energy gap in GaN thin film studied by thermomodulation

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2458-2460

  Li, Y ^a,c   Lu, Y ^a   Shen, H ^b   Wraback, M ^b   Brown, M G ^c   Schurman, M ^c   Koszi, L ^c   Stall, R A ^c  

^a RUTGERS UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY; THERMAL EFFECTS; THIN FILMS;

BROADENING PARAMETER; EPILAYER THICKNESS; LINESHAPE ANALYSIS; TEMPERATURE DEPENDENCE; THERMOMODULATION; VARSHNI COEFFICIENTS;

ENERGY GAP;

EID: 0031554248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118855     Document Type: Article

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